Eletrônica de Potência

Sumário Anterior Atual Seguinte

Original Paper • Eletrônica Potência 31 • 2026 • https://doi.org/10.18618/REP.e202603 linkcopy

Analysis and Design of a Half-Bridge Converter with Current Doubler for Auxiliary Power Modules in Electric Vehicles

Authorship SCIMAGO INSTITUTIONS RANKINGS

Electric vehicles (EVs) demand highly efficient power management systems to enhance reliability and extend operational autonomy. Unlike traditional internal combustion engine (ICE) vehicles, which use alternators to supply low-voltage systems, EVs rely on DC-DC converters, commonly referred to as Auxiliary Power Modules (APMs). This paper presents the analysis, design, and experimental validation of a half-bridge converter with a current-doubler (HB-CD) topology tailored for APM applications. A generalized structure is proposed to support the parallel operation of multiple modules, aiming to mitigate current stress and reduce output ripple. A 3 kW laboratory prototype was implemented using two 1.5 kW modules operating in parallel, enabling interleaved operation and effective current sharing. Experimental results demonstrate the converter’s ability to maintain high efficiency, reaching up to 94.6% under nominal conditions and 95.9% under minimum input voltage operation, confirming the feasibility of the proposed topology for high-current automotive applications.

KEYWORDS
Auxiliary Power Module; DC-DC converter; electric vehicles

Parameter	Value
Output power	P_out = 3000 W
Input voltage	V_HV = [256 − 400] V
Output voltage	V_LV = [10 − 14] V
Output Current	I_LV = [0 − 250] A
Transformer ratio	n = 4
Switching frequency	f_s = 100 kHz
Inductors	L_1,1 = L_2,1 = L_1,2 = L_2,2 = 3.3 µH
Capacitors	C₁ = ₂ = 10 µF
Leakage inductance	L_k = 3.34 µH
Magnetizing inductance	L_m = 731.79 µH
Primary snubber (RC)	R_S = 10 Ω, C_S = 100 pF
Secondary snubber (RCD)	R_S = 680 Ω, C_S = 100 nF, Diode = STPS10H100SFY
Component (Part number)	Main Parameters
S1,1, 2,1, 1,2, 2,2 (UJ4C075060K4S)	SiC, 750 V R_DS(on) = 60 mΩ (T_j = 25 řC)
S1,1, 2,1, 1,2, 2,2 (UJ4C075060K4S)	SiC, 750 V R_DS(on) = 60 mΩ (T_j = 25 řC)
S3,1, 4,1, 3,2, 4,2 (IPT017N10NF2S)	Si, 100 V R_DS(on) = 1.6 mΩ (T_j = 25 řC)
S3,1, 4,1, 3,2, 4,2 (IPT017N10NF2S)	Si, 100 V R_DS(on) = 1.6 mΩ (T_j = 25 řC)
L1,1, 2,1, 1,2, 2,2	3.3 µH, PQ3218-3R3-70-T, (Standex Electronics)
High frequency transformer	T250-16-4, (Payton Planar)
High frequency transformer	T250-16-4, (Payton Planar)

Products / Prototypes		Input range (V)	SCD_ct.1	f_s (kHz)	Power (W)	Peak Efficiency	Full load efficiency	Power density (kW/
LLC half-bridge [¹³]		[220 - 400]	6	[90-200]	2500	93.2%	92.4%	-
Gen5 High Voltage DC- DC [²¹]		[220 - 800]	-	-	1200	>92%	>92%	0.22†
High voltage DC-DC [²²]		[225 - 455]	-	-	3100	>94%	>92%	1.00†
Full-Bridge Center Tap [²³]		[240 - 400]	6	500	2700	>94%	>90%	6.00
ISHB zeta converter [²⁴]		[460 - 780]	8	700	1200	93.4%	91.6%	10.20
Two-mode low voltage DC-DC converter [¹²]		[350 - 800]	6	70	600	>92%	>90%	-
3evo high voltage DC- DC [²⁵]		[250 - 475]	-	-	3600	≤ 95%	≤ 95%	-
This Work		[256 - 400]	12	100	3000	95.9%	92.3%	0.83

location_on

Associação Brasileira de Eletrônica de Potência (SOBRAEP) Universidade Federal de Viçosa - UFV, Departamento de Engenharia Elétrica - DEL, Gerência de Especialistas em Sistemas Elétricos de Potência - GESEP, Av. P.H. Rolfs, Campus Universitário, S/nº Cep: 36570-900, +55(31) 3612-6400 - Viçosa - MG - Brazil
E-mail: editor@sobraep.org.br

rss_feed Acompanhe os números deste periódico no seu leitor de RSS

Reportar erro