TY  - JOUR 
T1  - Ionizing radiation and hot carrier effects in SiC MOS devices
JO  - Brazilian Journal of Physics
A1  - Vasconcelos, E. A. de
A1  - Silva Jr., E. F. da
A1  - Katsube, T.
A1  - Yoshida, S.
SN  - 0103-9733
UL  - 10.1590/S0103-97332002000200040
VL  - 32 
Y1  - 2002
PB  - Brasil 
ER  -