@article{vasconcelos_silva jr._katsube_yoshida_2002,  title={Ionizing radiation and hot carrier effects in SiC MOS devices},  volume={32},  ISSN={0103-9733},  url={https://doi.org/10.1590/S0103-97332002000200040},  DOI={10.1590/S0103-97332002000200040},  number={2a},  journal={Brazilian Journal of Physics},  publisher={Sociedade Brasileira de Física},  author={Vasconcelos, E. A. de and Silva Jr., E. F. da and Katsube, T. and Yoshida, S.},  year={2002},  month={Jun},  pages={389–391} }