TY  - JOUR 
T1  - Effect of non-abrupt doping and interfacial profiles on the carrier sheet density in one-side modulation-doped GaN/AlGaN quantum wells
JO  - Brazilian Journal of Physics
A1  - Enders, B. G.
A1  - Lima, F. M. S.
A1  - Fonseca, A. L. A.
A1  - Nunes, O. A. C.
A1  - Silva Jr, E. F. da
SN  - 0103-9733
UL  - 10.1590/S0103-97332009000200023
VL  - 39 
Y1  - 2009
PB  - Brasil 
ER  -