@article{enders_lima_fonseca_nunes_silva jr_2009,  title={Effect of non-abrupt doping and interfacial profiles on the carrier sheet density in one-side modulation-doped GaN/AlGaN quantum wells},  volume={39},  ISSN={0103-9733},  url={https://doi.org/10.1590/S0103-97332009000200023},  DOI={10.1590/S0103-97332009000200023},  number={1a},  journal={Brazilian Journal of Physics},  publisher={Sociedade Brasileira de Física},  author={Enders, B. G. and Lima, F. M. S. and Fonseca, A. L. A. and Nunes, O. A. C. and Silva Jr, E. F. da},  year={2009},  month={Apr},  pages={252–255} }